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oai:www.ideals.illinois.edu:2142/85937 2023-07-11 col_2142_5131 col_2142_14837 com_2142_5130 com_2142_14836 com_2142_234

Kushner, Mark J. Grapperhaus, Michael James 2015-09-28T14:51:21Z 2015-09-28T14:51:21Z 10000-01-01 1998 1998 To account for the surface effects on the plasma behavior, a mesoscale Monte Carlo simulation has been developed which joins the die-scale surface chemistry with the plasma scale in the HPEM. The presence of etch products in the plasma is seen to perturb the bulk plasma. The presence of photoresist redeposition is seen to have a minor, but important, effect on the etch rate. At low pressure, the etch rate is increased, although the probability of a given ion causing an etch is decreased. Made available in DSpace on 2015-09-28T14:51:21Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9834680.pdf: 4516047 bytes, checksum: 25c87022ea09752df37fcc99f3cd5645 (MD5) Previous issue date: 1998 Embargo set by: Seth Robbins for item 87218 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 116 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. http://hdl.handle.net/2142/85937 (MiAaPQ)AAI9834680 eng Engineering, Electronics and Electrical Multi-Scale Transport Phenomena in Low-Pressure Plasmas text Nuclear Engineering Nuclear Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.