2026-09-23T20:42:31Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/92675 2023-07-11 col_2142_5131 com_2142_5130

Rockett, Angus Alexander Erickson, Thomas Glenn 2016-11-10T17:49:14Z 2016-11-10T17:49:14Z 2016-07-21 2016-08 Nitrogen is incorporated into CuInSe2 (CIS), and other related materials, using a scalable, commonly used, technique. The growth characteristics, film morphology and electronic properties of these N doped materials, as it is affected by nitrogen, are studied, both in films grown with nitrogen, and in films implanted with nitrogen. Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2016-11-09 without embargo terms The student, Thomas Erickson, accepted the attached license on 2016-07-21 at 13:10. The student, Thomas Erickson, submitted this Thesis for approval on 2016-07-21 at 13:15. This Thesis was approved for publication on 2016-07-21 at 16:26. DSpace SAF Submission Ingestion Package generated from Vireo submission #10055 on 2016-11-09 at 10:26:03 Made available in DSpace on 2016-11-10T17:49:14Z (GMT). No. of bitstreams: 2 ERICKSON-THESIS-2016.pdf: 2026776 bytes, checksum: 979d10c7c05b5b4262cceaf58bbe1600 (MD5) LICENSE.txt: 4212 bytes, checksum: 0b489071536d27e7f9fa0f5af27dceab (MD5) Previous issue date: 2016-07-21 application/pdf http://hdl.handle.net/2142/92675 en Copyright 2016 Thomas Erickson Thin Film Photovoltaics CuInSe2 Physical Vapor Deposition Electronic Materials A study of the creation and characterization of nitrogen doped CuInSe2 (CIS:N), as a potential improved back contact material for CdTe and Cu(IN_xGA_1-x)Se2 photovoltaic cells text text Materials Science & Engineerng Materials Science & Engr University of Illinois at Urbana-Champaign Thesis M.S.