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Feng, Milton Feng, Milton Jin, Jianming Dallesasse, John M. Bayram, Can Liu, Michael E 2016-11-10T18:27:39Z 2016-11-10T18:27:39Z 2018-11-11T10:15:28Z 2016-07-06 2016-08 High speed semiconductor lasers are used in optical transceivers for short-reach data links. With fast-growing data capacity and traffic in the data centers around the globe, faster optical transceivers are demanded. A microcavity vertical cavity surface-emitting laser (VCSEL) is able to show a high modulation bandwidth as well as single-mode operation; however, because of the small oxide aperture (< 3 µm), a microcavity VCSEL shows high resistance and low optical power. An 850 nm oxide-confined VCSEL with an aperture ~4 µm is able to show error-free transmission at 40 Gb/s. With an advanced DBR design for parasitic reduction as well as better thermal conduction and a short 0.5-λ cavity with five quantum wells, an 850 nm VCSEL is able to demonstrate 57 Gb/s error-free transmission at 25 °C and 50 Gb/s error-free transmission at 85 °C. The dynamic carrier profile in the base of a transistor laser makes it possible to have a shorter carrier lifetime than in a diode laser. The first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with AlGaAs and dielectric distributed Bragg reflector (DBR) is fabricated. Because of the mismatch between the cavity design and the quantum well emission, the VCTL is only able to show stimulated emission at low temperatures. Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2018-08-01 The student, Michael Liu, accepted the attached license on 2016-07-05 at 13:21. The student, Michael Liu, submitted this Dissertation for approval on 2016-07-06 at 10:28. This Dissertation was approved for publication on 2016-07-06 at 16:54. DSpace SAF Submission Ingestion Package generated from Vireo submission #9757 on 2016-11-10 at 12:20:10 Made available in DSpace on 2016-11-10T18:27:39Z (GMT). No. of bitstreams: 2 LIU-DISSERTATION-2016.pdf: 6840605 bytes, checksum: 1f03c019c59ac9b67c4ca9c46bfac172 (MD5) LICENSE.txt: 4208 bytes, checksum: d7d5fe24e9fd19c167fdf547bd4096dc (MD5) Previous issue date: 2016-07-06 Embargo set by: Seth Robbins for item 95340 Lift date: 2018-11-10T18:28:02Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system Limited Restriction Lifted for Item 95340 on 2018-11-11T10:15:28Z. application/pdf http://hdl.handle.net/2142/92920 en Copyright 2016 Michael Liu Vertical Cavity Surface-Emitting Laser Vertical Cavity Transistor Laser Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser text text Electrical & Computer Eng Electrical & Computer Engr University of Illinois at Urbana-Champaign Dissertation Ph.D.