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        <identifier>oai:www.ideals.illinois.edu:2142/97344</identifier>
        <datestamp>2023-07-11</datestamp>
        <setSpec>col_2142_5131</setSpec>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:subject>Electronics hot spot cooling</dc:subject>
          <dc:subject>Jumping-droplet condensation</dc:subject>
          <dc:subject>Electric-field-enhanced jumping-droplet</dc:subject>
          <dc:subject>High-heat-flux</dc:subject>
          <dc:subject>High power density</dc:subject>
          <dc:subject>Power electronics</dc:subject>
          <dc:subject>Thermal management</dc:subject>
          <dc:description>Mitigating heat generated by hot spots inside of power electronic devices is a formidable obstacle to further increases in power density. This work presents the first demonstration of active cooling for hot spots in compact electronics via electric-field-enhanced (EFE) jumping-droplet condensation. To test the viability of EFE condensation for electronic hot spot cooling, an experimental setup was developed to remove heat via droplet evaporation from single and multiple high-power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm x 2.6 mm).  An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric fields between the condensing surface and an electrically floated circuit (directly to the transistor) or a guard ring (surrounding the transistor). Heat transfer measurements were performed in ambient air (22-25 degrees Celsius air temperature, 20-45% relative humidity) to determine the effect of gap spacing (1-5 mm) between the GaN transistor and superhydrophobic surface, strength of the electric field (50-250 V/cm), and the cooling performance at different applied heat flux conditions (demonstrated to 13 W/cm^2) along with power dissipation levels (approximately 1.57 W). EFE condensation was shown to enhance the heat transfer from the local hot spot by approximately 200% compared to cooling without jumping and by 20% compared to non-EFE jumping. Dynamic switching of the electric field for a two-GaN system reveals the potential for active cooling of mobile hot spots. The opportunity for further cooling enhancement by the removal of non-condensable gases (NCGs) is discussed, promising local hot spot heat dissipation rates approaching 120 W/cm^2. This work not only demonstrates EFE-condensation-based electronics cooling for the first time, but also provides a framework for the development of active jumping-droplet-based vapor chambers and heat pipes capable of spatial and temporal thermal dissipation control.</dc:description>
          <dc:description>Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2017-08-10 without embargo terms</dc:description>
          <dc:description>The student, Thomas Foulkes, accepted the attached license on 2017-04-12 at 16:42.</dc:description>
          <dc:contributor>Pilawa-Podgurski, Robert C. N.</dc:contributor>
          <dc:contributor>Miljkovic, Nenad</dc:contributor>
          <dc:creator>Foulkes, Thomas Peter</dc:creator>
          <dc:date>2017-08-10T19:14:57Z</dc:date>
          <dc:date>2017-08-10T19:14:57Z</dc:date>
          <dc:date>2017-04-13</dc:date>
          <dc:date>2017-05</dc:date>
          <dc:description>The student, Thomas Foulkes, submitted this Thesis for approval on 2017-04-12 at 17:53.</dc:description>
          <dc:description>This Thesis was approved for publication on 2017-04-13 at 14:08.</dc:description>
          <dc:description>DSpace SAF Submission Ingestion Package generated from Vireo submission #10729 on 2017-08-10 at 13:39:35</dc:description>
          <dc:description>Made available in DSpace on 2017-08-10T19:14:57Z (GMT). No. of bitstreams: 2
FOULKES-THESIS-2017.pdf: 6016241 bytes, checksum: 337b6fdf22f946d504d10f03a0fadc3b (MD5)
LICENSE.txt: 4211 bytes, checksum: 08d0bf3568dbdd73dcab13092b8494d8 (MD5)
  Previous issue date: 2017-04-13</dc:description>
          <dc:format>application/pdf</dc:format>
          <dc:identifier>http://hdl.handle.net/2142/97344</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>Copyright 2017 Thomas Peter Foulkes</dc:rights>
          <dc:subject>Hot spot cooling</dc:subject>
          <dc:title>Developing an active, high-heat-flux thermal management strategy for power electronics via jumping-droplet phase-change cooling</dc:title>
          <dc:type>text</dc:type>
          <dc:type>text</dc:type>
          <degree>
            <department>Electrical &amp; Computer Eng</department>
            <discipline>Electrical &amp; Computer Engr</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Thesis</level>
            <name>M.S.</name>
          </degree>
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