Microwave characterization of vertical cavity surface emitting diode laser and transistor laser

Wang, Curtis Yilin

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https://hdl.handle.net/2142/102783 Copy

Description

Title

Microwave characterization of vertical cavity surface emitting diode laser and transistor laser

Author(s)

Wang, Curtis Yilin

Issue Date

2018-10-08

Director of Research (if dissertation) or Advisor (if thesis)

Feng, Milton

Doctoral Committee Chair(s)

Feng, Milton

Committee Member(s)

• Jin, Jianming
• Dallesasse, John M.
• Dragic, Peter

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Date of Ingest

2019-02-07T20:35:53Z

Keyword(s)

Semiconductor Laser, Transistor Laser, optical interconnect

Abstract

Semiconductor lasers are widely deployed in optical transceivers for optical fiber based short-reach (< 100m) data links. With increasingly growing data traffic worldwide in data centers, developments of faster optical transceivers, hence high-speed semiconductor lasers, are highly demanded. The vertical cavity surface-emitting laser (VCSEL) is the most commercially popular choice. With high reflectivity DBR mirrors and oxide-confinement for emission mode control and leakage current reduction, VCSELs are able to achieve a low laser threshold and high modulation bandwidth. Currently in published research results, the highest data transmission rate demonstrated for an 850 nm VCSEL is 57 Gb/s error-free at 25 °C and 50 Gb/s error-free at 85 °C. Nevertheless, the bandwidth and data transmission performance of diode lasers, such as VCSELs, are fundamentally limited by the slow spontaneous recombination lifetime. Therefore, a new kind of semiconductor laser, the transistor laser (TL), is proposed to break the bandwidth bottleneck as the dynamic carrier transport in the base of a TL drastically reduces the spontaneous recombination lifetime. Ultimately to reach low threshold and high energy per bit efficiency, the first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. To further reduce the excessive emitter series resistance, a VCTL with partially etched mesa is developed and fabricated. The tunneling modulation aspect and possible application of the TL is also explored in this dissertation.

Graduation Semester

2018-12

Type of Resource

text

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http://hdl.handle.net/2142/102783

Copyright and License Information

Copyright 2018 Curtis Wang

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