Impurity-induced disordering of vertical-cavity surface-emitting lasers: Applications to polarization control and high-speed modulation
Kraman, Mark D.
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https://hdl.handle.net/2142/115418
Description
Title
Impurity-induced disordering of vertical-cavity surface-emitting lasers: Applications to polarization control and high-speed modulation
Author(s)
Kraman, Mark D.
Issue Date
2022-04-26
Director of Research (if dissertation) or Advisor (if thesis)
Dallesasse, John M
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
vertical-cavity surface-emitting laser
impurity-induced disordering
single-mode
high-speed modulation
polarization
Language
eng
Abstract
Impurity-induced disordering (IID) of vertical-cavity surface-emitting lasers
(VCSELs) as a platform technology enables mode engineering through the
precise introduction of mirror loss while simultaneously improving top distributed Bragg reflector (DBR) conductivity. Strain-engineering of the diffusion masks used in IID processing impacts characteristics of the aspect
ratio of the disordering diffusant and enables high-power single-mode emission. The modulation response and applicability of this platform to the goal
of polarization control in 850 nm gallium arsenide-based oxide-confined VCSELs are investigated. An analysis of the high-frequency damping factors of
IID VCSELs given varying disordering depths is provided. The experimental
design and fabrication process for polarization controlled VCSELs using elliptical strain-engineered disorder-defined apertures is discussed, and measured
polarization characteristics are analyzed as a function of strained diffusion
mask ellipticity. The orthogonal polarization suppression ratios (OPSRs)
of VCSELs using circular disorder-defined apertures under strain-engineered
diffusion mask variants are discussed.
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