Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy

Kim, Mijung

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https://hdl.handle.net/2142/122257 Copy

Description

Title

Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy

Author(s)

Kim, Mijung

Issue Date

2023-11-30

Director of Research (if dissertation) or Advisor (if thesis)

Lee, Minjoo L

Doctoral Committee Chair(s)

Lee, Minjoo L

Committee Member(s)

• Bayram, Can
• Dallesasse, John
• Shim, Moonsub

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• Lattice-mismatched
• Iii-v
• Epitaxy
• Mbe
• Optoelectronic Devices

Language

eng

Abstract

Epitaxial growth of high-quality III-V semiconductors that are lattice-mismatched to conventional substrates is vital to device applications such as high-efficiency multi-junction solar cells, LEDs, and laser diodes. Challenges arise due to the formation of defects driven by lattice mismatch that can damage the performance of III-V devices. In this thesis, I describe the growth of high-quality III-P materials by molecular beam epitaxy in lattice-mismatched systems for optoelectronic device applications. My work includes the development of compositionally graded buffers and growth optimization studies to mitigate challenges for lattice-mismatched materials. First, I demonstrate metamorphic 1.7 eV In0.63Ga0.37P front-junction and rear-heterojunction solar cells grown on GaAs substrates that show promise for high efficiency 1.7 eV/1.1 eV double junction solar cells and photovoltaic devices with efficient operation at elevated temperatures. Next, I demonstrate growth of GaP on silicon on insulator (SOI). Nanophotonic devices based on GaP have recently attracted significant interest due to their unique properties such as large refractive index, relatively wide bandgap, and non-centrosymmetric crystal structure, while SOI wafers are commonly used in silicon photonics. Taken together, this dissertation shows the challenges and opportunities of phosphide-based materials and devices grown on lattice-mismatched substrates.

Graduation Semester

2023-12

Type of Resource

Text

Handle URL

https://hdl.handle.net/2142/122257

Copyright and License Information

Copyright 2023 Mijung Kim

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