Solution-processed thin-film materials for high-performance nanoelectronics

An, Fufei

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https://hdl.handle.net/2142/124638 Copy

Description

Title

Solution-processed thin-film materials for high-performance nanoelectronics

Author(s)

An, Fufei

Issue Date

2024-04-09

Director of Research (if dissertation) or Advisor (if thesis)

Cao, Qing

Doctoral Committee Chair(s)

Cao, Qing

Committee Member(s)

• Zuo, Jian-Min
• Schleife, Andre
• van der Zande, Arend

Department of Study

Materials Science & Engineerng

Discipline

Materials Science & Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• Solution-process
• Amorphous Carbon
• 2d Materials
• Thin Film Materials
• Nanoelectronics

Language

eng

Abstract

The burgeoning field of solution-processed nanomaterials for high-performance transistors and thin-film transistor (TFT) applications is poised to revolutionize the electronics industry with cost-effective, scalable, and versatile manufacturing processes. Distinguished from conventional high-temperature, vacuum-based techniques, solution processing allows for lower-temperature fabrication and is amenable to roll-to-roll manufacturing, paving the way for flexible electronic devices. At the core of this thesis is the development and utilization of quasi-2D amorphous carbon and Cu-In-Se based metal chalcogenide thin films via solution-based techniques. Targeting for next-generation high performance low-dimensional transistors, the solution-based strategy for fabricating ultrathin quasi-2D amorphous carbon films and their few-layered assemblies offers substantial advantages in terms of wafer-size scalability, low cost, and especially the capability to form multilayers with precisely controlled thickness in a layer-by-layer fashion. These carbon films exhibit exceptional properties for nanoelectronics, enhancing performances while reducing power consumption due to their amorphous structure and low surface dangling bond density. Meanwhile, Cu-In-Se-based chalcogenide films demonstrate exceptional compositional and uniformity control, ideal for low-power TFTs, due to their advanced mobility, stability, and substrate adaptability. This thesis underscores the importance of aligning nanomaterial innovation with specific technological needs and the seamless integration of these new materials into the existing semiconductor manufacturing landscape to overcome future challenges.

Graduation Semester

2024-05

Type of Resource

Text

Handle URL

https://hdl.handle.net/2142/124638

Copyright and License Information

Copyright 2024 Fufei An

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