WAFER BONDING OF POROUS SILICON AND ACTIVE DEVICE WAFERS

Chung, Megan

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https://hdl.handle.net/2142/124853 Copy

Description

Title

WAFER BONDING OF POROUS SILICON AND ACTIVE DEVICE WAFERS

Author(s)

Chung, Megan

Issue Date

2023-05-01

Keyword(s)

volumetric optical integrated circuits, porous silicon, wafer bonding, sacrificial substrate, self-assembled monolayer, amine-epoxy

Date of Ingest

2024-10-14T11:05:22-05:00

Abstract

Optical integrated circuits are important in many industries including communications, computing, and sensing. The majority of photonic integrated circuits today are two-dimensional. Three-dimensional optical integrated circuits are more efficient because of their low optical losses and high data transfer rates. One method to achieve volumetric photonic integrated circuits (VPICs) requires 3D waveguides to be written inside a porous silica (PSiO2) scaffold. To take advantage of the high throughput of VPICs, the waveguides need to be integrated with external active devices (like lasers and photodetectors), and therefore a generalizable bonding process between PSiO2 and active device wafers is necessary. In this thesis, we explore different methods to successfully wafer bond PSiO2 with a dummy wafer of half quarts and half chrome. We investigate two different methods to hopefully achieve the same bonding results: a germanium sacrificial substrate transfer method and a self-assembled monolayer bonding method. Noting the successful parts of each process, we also make future recommendations for the unsuccessful steps of each.

Type of Resource

text

Genre of Resource

dissertation/thesis

Language

eng

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