SILICON NITRIDE STRESS OPTIMIZATION FOR S-RUM DEVICE FABRICATION

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SP21-ECE499-Thesis-Wang, Siyuan.pdf

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https://hdl.handle.net/2142/124907

Title: SILICON NITRIDE STRESS OPTIMIZATION FOR S-RUM DEVICE FABRICATION
Author(s): Wang, Siyuan
Issue Date: 2021-05-01
Keyword(s): SiNx; PECVD; Inductors; self-fabricate device; MEMS
Date of Ingest: 2024-10-16T09:38:04-05:00
Abstract: In this work, we optimized the stress in plasma-deposited SiNx films in order to fabricate tubes with lower diameter for the purpose of device, such as inductors, fabrication. We reached compressive stress as great as -1357 MPa, and tensile stress as great as 664 MPa. We also fabricated rolled-up SiNx tubes, which reached inner diameter of 6 μm with membrane thickness around 35 nm. Inductors based on the optimized SiNx recipe have also been fabricated, with an inner diameter of ~90 μm. These results can be used to fabricate devices such as inductors. To better improve the result, changing the deposition temperature is also known to have an impact on the stress. The deposition pressure can also be increased further to see if that bring a change to the stress.
Type of Resource: text
Genre of Resource: dissertation/thesis
Language: eng

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