Graphene-based field effect transistor integration using gm/ID design methodology
Su, Daniel
Loading…
Permalink
https://hdl.handle.net/2142/127298
Description
Title
Graphene-based field effect transistor integration using gm/ID design methodology
Author(s)
Su, Daniel
Issue Date
2024-12-12
Director of Research (if dissertation) or Advisor (if thesis)
Hanumolu, Pavan K
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Graphene
gm/ID
Analog Design
CNT
Abstract
The fast-paced adaptation and innovation of technology has necessitated the exploration of new materials that could pick up where Silicon technology could not continue due to material property limitations. While technology starts to convert from silicon-based to two-dimensional graphene-based devices, major changes must be made to create the next-generation technology. This change also introduces restrictions to the current outdated design methodology. This paper provides an extensive review on current physical designs of Graphene-based field effect transistors and discusses how these designs could affect the current gm/ID design methodology. Furthermore, it explores the implementation of this methodology using Python as the computational framework.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
