Atomically precise single Graphene Nanoribbon transistor
Huang, Pin-Chiao
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https://hdl.handle.net/2142/129664
Description
Title
Atomically precise single Graphene Nanoribbon transistor
Author(s)
Huang, Pin-Chiao
Issue Date
2025-02-21
Director of Research (if dissertation) or Advisor (if thesis)
Lyding, Joseph W
Doctoral Committee Chair(s)
Lyding, Joseph W
Committee Member(s)
Rakheja, Shaloo
Girolami, Gregory S
Dragic, Peter D
Sinitskii, Alexander
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
silicon
scanning tunneling microscopy
surface cleaning
atomically flat
graphene nanoribbon
Language
eng
Abstract
This dissertation addresses the challenges in fabricating single graphene nanoribbon (GNR) transistors, particularly the difficulty in forming reliable and reproducible metal contacts. A novel low-voltage, direct-write scanning tunneling microscopy (STM) technique is introduced to pattern sub-5 nm metallic hafnium diboride (HfB2) contact pads directly onto individual GNRs in an ultrahigh vacuum environment. Scanning tunneling spectroscopy (STS) verifies the metallic and semiconducting natures of the HfB2 and GNRs, respectively, demonstrating that the STM process does not damage the GNRs. The deposition of HfB2 induces band-bending in the GNRs, forming local p-n junctions, and the degree of band-bending can be controlled by varying the metal work functions, eliminating the need for complex chemical doping. This contact engineering method simplifies the fabrication process for high-performance single GNR transistors. Additionally, the dissertation explores the fabrication of larger electrodes for transport measurements and the challenges associated with electrode instability and thermal damage during the cleaning process. The potential applications of STM-EBID for fabricating 3D nanostructures, including mechanical resonators, switches, and single-photon detectors, are also discussed. This work marks a significant advancement in GNR-based nanoelectronics, providing a reliable approach for precise metal contacts and furthering the integration of GNRs into functional electronic devices.
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