Withdraw
Loading…
Atomically precise single Graphene Nanoribbon transistor
Huang, Pin-Chiao
This item's files can only be accessed by the System Administrators group.
Permalink
https://hdl.handle.net/2142/129664
Description
- Title
- Atomically precise single Graphene Nanoribbon transistor
- Author(s)
- Huang, Pin-Chiao
- Issue Date
- 2025-02-21
- Director of Research (if dissertation) or Advisor (if thesis)
- Lyding, Joseph W
- Doctoral Committee Chair(s)
- Lyding, Joseph W
- Committee Member(s)
- Rakheja, Shaloo
- Girolami, Gregory S
- Dragic, Peter D
- Sinitskii, Alexander
- Department of Study
- Electrical & Computer Eng
- Discipline
- Electrical & Computer Engr
- Degree Granting Institution
- University of Illinois Urbana-Champaign
- Degree Name
- Ph.D.
- Degree Level
- Dissertation
- Keyword(s)
- silicon
- scanning tunneling microscopy
- surface cleaning
- atomically flat
- graphene nanoribbon
- Abstract
- This dissertation addresses the challenges in fabricating single graphene nanoribbon (GNR) transistors, particularly the difficulty in forming reliable and reproducible metal contacts. A novel low-voltage, direct-write scanning tunneling microscopy (STM) technique is introduced to pattern sub-5 nm metallic hafnium diboride (HfB2) contact pads directly onto individual GNRs in an ultrahigh vacuum environment. Scanning tunneling spectroscopy (STS) verifies the metallic and semiconducting natures of the HfB2 and GNRs, respectively, demonstrating that the STM process does not damage the GNRs. The deposition of HfB2 induces band-bending in the GNRs, forming local p-n junctions, and the degree of band-bending can be controlled by varying the metal work functions, eliminating the need for complex chemical doping. This contact engineering method simplifies the fabrication process for high-performance single GNR transistors. Additionally, the dissertation explores the fabrication of larger electrodes for transport measurements and the challenges associated with electrode instability and thermal damage during the cleaning process. The potential applications of STM-EBID for fabricating 3D nanostructures, including mechanical resonators, switches, and single-photon detectors, are also discussed. This work marks a significant advancement in GNR-based nanoelectronics, providing a reliable approach for precise metal contacts and furthering the integration of GNRs into functional electronic devices.
- Graduation Semester
- 2025-05
- Type of Resource
- Thesis
- Handle URL
- https://hdl.handle.net/2142/129664
- Copyright and License Information
- Copyright 2025 Pin-Chiao Huang
Owning Collections
Graduate Dissertations and Theses at Illinois PRIMARY
Graduate Theses and Dissertations at IllinoisManage Files
Loading…
Edit Collection Membership
Loading…
Edit Metadata
Loading…
Edit Properties
Loading…
Embargoes
Loading…