University of Illinois Urbana-Champaign

Van der Waals magnetic materials for spintronic device applications

Chyczewski, Stasiu Thomas

This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.

Permalink

https://hdl.handle.net/2142/130109

Description

Title
Van der Waals magnetic materials for spintronic device applications
Author(s)
Chyczewski, Stasiu Thomas
Issue Date
2025-07-17
Director of Research (if dissertation) or Advisor (if thesis)
Zhu, Wenjuan
Doctoral Committee Chair(s)
Zhu, Wenjuan
Committee Member(s)
  • Hoffmann, Axel F
  • Rakheja, Shaloo
  • Lyding, Joseph W
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
  • Magnetic materials
  • 2D materials
  • spintronics
  • vdW materials
  • microtechnology
  • nanotechnology
Abstract
Layered van der Waals (vdW) materials have attracted great attention for both their unique physical properties and potential applications in advanced devices. 2D magnets represent a new and rapidly growing family of materials that are being studied for spintronics. In addition to ferromagnets, non-magnetic 2D materials with strong spin orbit coupling and exotic symmetry also hold promise. In the first chapter I will briefly discuss magnetic devices in general, including the history and current state of the art. I will also introduce 2D magnetic materials, with an emphasis on the iron germanium/gallium telluride (FGT) family. In the second chapter I will introduce experimental work using electrical transport to systematically characterize 2D magnets. This includes the use of magnetotransport to unveil competing magnetic phases in iron germanium telluride as shown by the material's temperature dependent transport properties, planar Hall response, and field cooling divergence. The third chapter will entail a discussion of magnetic proximity effects observed in vdW heterostructures. Results showing how iron germanium telluride/platinum heterostructures exhibited unexpected emergent behavior will be presented. This includes changes such as wider hysteresis, steeper reversal, and larger magnetoresistance. The fourth chapter will present a study of MoTe2 films grown using MOCVD for spin orbit torque applications. We demonstrate highly efficient spin-charge conversion in wafer scale 1T' films grown in a back-end-of-line (BEOL) compatible process. The last chapter focuses on 2D multiferroics. I will present efforts to realize an artificial vdW multiferroic comprised of discrete ferromagnetic and ferroelectric components as well as discussions on the design considerations of such structures. I will also introduce results of a study of heterostructures incorporating the intrinsic vdW multiferroic NiI2 and graphene. These structures allow for the electrical characterization of the otherwise insulating helimagnet NiI2.
Graduation Semester
2025-08
Type of Resource
Thesis
Handle URL
https://hdl.handle.net/2142/130109
Copyright and License Information
Copyright 2025 Stasiu Chyczewski

Owning Collections

Graduate Dissertations and Theses at Illinois PRIMARY
Graduate Theses and Dissertations at Illinois