Strain induced mobility enhancement in monolayer two dimensional molybdenum disulfide
Afrid, Sheikh
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https://hdl.handle.net/2142/130226
Description
Title
Strain induced mobility enhancement in monolayer two dimensional molybdenum disulfide
Author(s)
Afrid, Sheikh
Issue Date
2025-07-25
Director of Research (if dissertation) or Advisor (if thesis)
Rakheja, Shaloo
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
2d Materials
Tmds
Mos2
Strain Engineering
Carrier Mobility
Language
eng
Abstract
Strain engineering has emerged as a powerful and versatile technique for modulating the transport properties of two-dimensional (2D) materials. In this study, we investigate the effects of the biaxial strain (compressive and tensile) on the carrier mobility of monolayer transition metal dichalcogenides (TMD), with a particular focus on molybdenum disulfide (MoS₂). Using a combination of ab initio electronic structure calculations and physics-based transport modeling, we analyze how mechanical strain alters the band and phonon structures, as well as influences key scattering mechanisms, including longitudinal acoustic (LA), longitudinal optical (LO), surface optical (SO) phonons, and charged impurity scattering, all within the framework of static dielectric screening. Our results show that tensile strain significantly enhances carrier mobility by suppressing intervalley scattering rates, while compressive strain has the opposite effect, leading to mobility degradation. In addition, we examine the dependence of mobility on the temperature, carrier concentration, dielectric environment, and impurity density parameters, providing a detailed picture of transport behavior in different operational regimes. These findings demonstrate the effectiveness of strain as a tunable design parameter for optimizing charge transport in 2D TMD-based devices and contribute to the broader goal of enabling mechanically controlled electronics in next-generation nanoscale systems.
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