Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films

Lazarz, Teresa S.

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Description

Title

Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films

Author(s)

Lazarz, Teresa S.

Issue Date

2009-09-25

Doctoral Committee Chair(s)

Abelson, John R.

Committee Member(s)

• Girolami, Gregory S.
• Rockett, Angus A.
• Braun, Paul V.
• Earles, Susan K.

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• chemical vapor deposition (CVD)
• ruthenium
• manganese nitride
• Ru
• Mn-N
• film deposition

Language

en

Abstract

Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition.

Type of Resource

text

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http://hdl.handle.net/2142/13834

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