Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam
Struck, Corey R.
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https://hdl.handle.net/2142/14655
Description
Title
Reduction of Line Edge Roughness in Semiconductor Photoresist by Means of a Grazing Incidence Ion Beam
Author(s)
Struck, Corey R.
Issue Date
2010-01-06T16:20:35Z
Director of Research (if dissertation) or Advisor (if thesis)
Ruzic, David N.
Doctoral Committee Chair(s)
Ruzic, David N.
Department of Study
Nuclear Plasma and Radiological Engineering
Discipline
Nuclear Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Line Edge Roughness
Line Width Roughness
Abstract
As semiconductor feature sizes continue to decrease, the phenomena of line
edge roughness (LER) becomes more disruptive in chip manufacturing. While
many efforts are underway to decrease LER from the photoresist, post-develop
smoothing techniques may be required to continue shrinking chip features
economically. This work reports on one such method employing the use of an
ion beam at grazing incidence along the features. This method smooths
relatively long spatial length LER, a potential advantage over other smoothing techniques that focus on just molecular scale LER. LER reduction numbers
Variables include beam energy and angular dependence. LER
measurements are taken using Hitachi image analysis software on top-down analytical SEM measurements.
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