University of Illinois Urbana-Champaign

Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition

Dowdy, Ryan S.

Content Files
Dowdy_Ryan.pdf

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https://hdl.handle.net/2142/14672

Description

Title
Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition
Author(s)
Dowdy, Ryan S.
Issue Date
2010-01-06T16:20:58Z
Director of Research (if dissertation) or Advisor (if thesis)
Li, Xiuling
Doctoral Committee Chair(s)
Li, Xiuling
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Date of Ingest
2010-01-06T16:20:58Z
Keyword(s)
  • nanowire
  • Vapor-liquid-solid (VLS)
  • III-V
  • quantum dot
  • gaas
  • offcut
  • suspended
  • zinc
  • Indium Arsenide (InAs)
  • nanostructure
  • movpe
  • mocvd
Abstract
Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.
Graduation Semester
2009-12
Permalink
http://hdl.handle.net/2142/14672
Copyright and License Information
Copyright 2009 Ryan S. Dowdy

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