University of Illinois Urbana-Champaign

Simulation of implantation and diffusion processes for electro-thermal microcantilevers

Bhatia, Bikramjit

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Bhatia_Bikramjit.pdf

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https://hdl.handle.net/2142/16150

Description

Title
Simulation of implantation and diffusion processes for electro-thermal microcantilevers
Author(s)
Bhatia, Bikramjit
Issue Date
2010-05-19T18:39:00Z
Director of Research (if dissertation) or Advisor (if thesis)
King, William P.
Department of Study
Mechanical Sci & Engineering
Discipline
Mechanical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Date of Ingest
2010-05-19T18:39:00Z
Keyword(s)
  • Atomic Force Microscope (AFM)
  • Electro-Thermal Microcantilevers
  • Implantation and Diffusion
Abstract
Atomic Force Microscope (AFM) compatible electro-thermal microcantilevers, capable of independently controlling cantilever temperature and electrical potential/current flow through the end of the tip, are proposed and designed. An important characteristic of these probes is the spatial dopant distribution that gives these devices the required electrical and thermal functionality. In this work, we have identified the design goals for these probes and determine the corresponding implantation and diffusion parameters for the doping steps. We used a two-dimensional model to simulate the process steps for doping different regions of the electro-thermal probe using DIOS, a multidimensional process simulator in the TCAD suite. Each cantilever probe consists of three legs – two of the legs are heavily doped to carry electrical current, with a low doped resistive heater at the cantilever free end, and the third leg, which is either heavily doped or made of metal coated silicon, is used to bias the tip. Based on the arrangement used to separate the electrical path from the heating circuit, three basic designs were developed - the “diode-type”, “transistor-type” and “metal-coated-electrode-leg-type”. Simulation geometries representative of the two kinds of p-n junctions in the “transistor” or the back-to-back diode configuration are used for doping simulations. Antimony (Sb) and Boron (B) were used as the respective n- and p-type doping species. The implantation and diffusion parameters were optimized to obtain the desired dopant profiles.
Graduation Semester
2010-5
Permalink
http://hdl.handle.net/2142/16150
Copyright and License Information
Copyright 2010 Bikramjit S. Bhatia

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