Antimony-based type-II superlattice infrared photodetectors on indium-arsenide substrates
Zuo, Daniel Y.
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https://hdl.handle.net/2142/26349
Description
Title
Antimony-based type-II superlattice infrared photodetectors on indium-arsenide substrates
Author(s)
Zuo, Daniel Y.
Issue Date
2011-08-26T15:24:26Z
Director of Research (if dissertation) or Advisor (if thesis)
Chuang, Shun-Lien
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Infrared detectors
Type-II Superlattice
Photodiode
InAs substrate
electron beam induced current (EBIC)
Abstract
The wide variety of applications for mid- and far-infrared detection has
spurred the study of cutting-edge technologies for use in the next genera-
tion of detectors in place of the current systems, such as mercury cadmium
telluride. While type-II superlattices over a number of advantages in design
and material quality, theoretical predictions of their high performance have
yet to be realized. This work concentrates on novel designs, fabrication, and
characterization of type-II superlattice infrared detectors.
In this work we present the first InAs/GaSb type-II superlattice photode-
tectors grown on an InAs substrate via metal-organic chemical vapor depo-
sition. The design and fabrication of the devices are detailed, along with
several characterization processes, including low-temperature electron beam
induced current (EBIC) to study structural defects. Through this work, the
optical absorption of the undoped substrate was shown to be significantly
lower than that of GaSb. The detectors have a cutoff wavelength (50% re-
sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2
Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a
peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.
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