University of Illinois Urbana-Champaign

Development of vertical cavity transistor laser and microcavity laser

Wu, Mong-Kai

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Mong-Kai_Wu.pdf

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https://hdl.handle.net/2142/49650

Description

Title
Development of vertical cavity transistor laser and microcavity laser
Author(s)
Wu, Mong-Kai
Issue Date
2014-05-30T17:02:56Z
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Doctoral Committee Chair(s)
Feng, Milton
Committee Member(s)
  • Schutt-Ainé, José E.
  • Dallesasse, John M.
  • Goddard, Lynford L.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Date of Ingest
2014-05-30T17:02:56Z
Keyword(s)
  • vertical cavity transistor laser
  • microcavity laser
  • surface-emitting vertical-cavity lasers
  • energy efficient
Abstract
An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting diode lasers (VCSELs) have achieved a data transmission rate of 25 Gbit/s per channel. However, the VCSEL bandwidth is limited by the slow recombination lifetime in the active region, which is the major challenge to transmitting at a data rate greater than 60 Gbit/s for a single VCSEL. To push the modulation speed, Purcell enhancement in the small volume and high Q cavity can be applied in microcavity VCSELs, enhancing the spontaneous recombination rate. In the first part of the dissertation we demonstrate that the microcavity VCSEL has a reduced recombination rate of 0.5 ns when the aperture size is less than 3 μm. With improved RF layout design and fabrication, we demonstrate a microcavity laser operating error-free at 40 Gbit/s. In the second part of the dissertation, we demonstrate the first vertical cavity transistor laser (VCTL) operation. Due to the dynamic charge transport in the active region, the transistor laser can achieve shorter carrier lifetime (~ 29 ps), making it especially suitable for high-speed lasers. We discuss the VCTL material and layout design, including how to reduce the parasitics via layout and process development. With three design iterations, we achieve a highly efficient VCTL.
Graduation Semester
2014-05
Permalink
http://hdl.handle.net/2142/49650
Copyright and License Information
Copyright 2014 Mong-Kai Wu

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