University of Illinois Urbana-Champaign

Calibration of Silicon Nanowire Devices with High-K Hafnium Oxide Dielectrics for BioSensing Applications

Zhong, Yu

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https://hdl.handle.net/2142/55665

Description

Title
Calibration of Silicon Nanowire Devices with High-K Hafnium Oxide Dielectrics for BioSensing Applications
Author(s)
Zhong, Yu
Contributor(s)
Bashir, Rashid
Issue Date
2014-05
Keyword(s)
  • nanowire fabrication
  • hafnium oxide
  • field effect transistors
  • sensing
Abstract
Biosensors based on silicon nanowire field-effect-transistors (SiNWFETs) are one of the most promising platforms for recognizing a wide range of biological and chemical species. There are many attractive properties, including low cost, ultrahigh sensitivity, direct electrical readout, and multiplexed detection. As a result, these sensors can lead to the future development of point-of-care (POC) applications. Unfortunately, a number of performance issues, such as gate leakage and current instability due to fluid contact, have prevented the widespread adoption of the technology. High-k dielectrics, such as hafnium oxide (HfO2), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. In this work, we modify the traditional process for fabricating stable HfO2 dielectric-based silicon nanowires for biosensing applications and calibrate every stage of fabrication protocol.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/55665

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