Type-II Superlattices for Infrared Detection: Diffusion Characterization Using Electron Beam Induced Current
Yoon, Narae
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https://hdl.handle.net/2142/79008
Description
Title
Type-II Superlattices for Infrared Detection: Diffusion Characterization Using Electron Beam Induced Current
Author(s)
Yoon, Narae
Contributor(s)
Wasserman, Daniel
Issue Date
2015-05
Keyword(s)
type-II superlattices
infrared detector
electron-beam-induced current
diffusion characteristics
Abstract
Type-II superlattices (T2SLs) primarily utilizing antimonide-based III-V materials have been the subject of
significant interest for their mid-wave or long-wave infrared (MWIR or LWIR) detection
capabilities. The continuing development of these detector structures depends on the ability to
accurately measure the minority carrier lifetimes and diffusion characteristics of the T2SL
material. Our nBn detector samples were fabricated via a standard photolithography and chemical wet
etch into square mesas with top and bottom contacts using Ti/Pt/Au. This thesis introduces a
scanning electron microscope-electron beam induced current (SEM-EBIC) technique to study defects in
our fabricated devices. By comparing experimental data to the simulated results, a sample's surface
recombination velocity and its minority carrier diffusion length can be extracted.
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