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Novel Reactions on Halogen -Terminated Si(100)
Trenhaile, Brent Reid
Doctoral Committee Chair(s)
Weaver, John H.
Department of Study
Degree Granting Institution
University of Illinois at Urbana-Champaign
Physics, Condensed Matter
"Finally, the initial stage of oxidation was studied for H2O-exposed Si(100) in the presence of Cl. Following H2O dissociation and saturation of the surface with Cl, a mild anneal allowed oxygen atoms to insert into Si dimer bonds. It was demonstrated that Cl allowed the bridge-bonded oxygen atoms to be imaged as a dark spot in the center of the dimer. The density of these ""split dimer"" defects correlated with the c-type defect density on the clean surface. These results also showed how to produce nearly defect free halogen-terminated Si(100)."