Development of Iridium-Based Gate Structure for Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Enhancement-Mode and Depletion-Mode High Electron Mobility Transistors
Kim, Seiyon
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https://hdl.handle.net/2142/80928
Description
Title
Development of Iridium-Based Gate Structure for Indium Aluminum Arsenide/indium Gallium Arsenide/indium Phosphide Enhancement-Mode and Depletion-Mode High Electron Mobility Transistors
Author(s)
Kim, Seiyon
Issue Date
2005
Doctoral Committee Chair(s)
Adesida, Ilesanmi
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Consequently, Ir-based gate metallization has a potential to replace conventional gate metals such as Ti/Pt/Au for D-HEMTs and Pt/Ti/Pt/Au for E-HEMTs. Due to the high thermal stability of Ir-based gate contacts, highly reliable E/D-HEMT circuit utilizing Ir-based gate structure can be realized.
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