Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials
Gluschenkov, Oleg
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https://hdl.handle.net/2142/81321
Description
Title
Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials
Author(s)
Gluschenkov, Oleg
Issue Date
1999
Doctoral Committee Chair(s)
Kyekyoon (Kevin) Kim
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Low-pressure atomic nitrogen source was used to investigate nitridation of thin silicon dioxide films at 760°C. The SiO2 films were substantially nitrided by an exposure to the atomic flux of ∼10 15 cm-2s-1 for only 30 s.
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