Surface Reaction Mechanisms for Plasma Processing of Semiconductors
Sankaran, Arvind
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https://hdl.handle.net/2142/82359
Description
Title
Surface Reaction Mechanisms for Plasma Processing of Semiconductors
Author(s)
Sankaran, Arvind
Issue Date
2003
Doctoral Committee Chair(s)
Kushner, Mark J.
Department of Study
Chemical and Biomolecular Engineering
Discipline
Chemical and Biomolecular Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Cleaning of residual polymer from trenches following etching and the deposition of a continuous barrier layer are critical processes for integration PS as ILDs. To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and incorporated into the MCFPM. Stripping was less efficient from PS trenches having large pores and high interconnectivity, as compared to SS. Cu ionized metal physical vapor deposition was also investigated as a surrogate for barrier coating. Thin film deposition was less conformal for PS with large pores and interconnected porous networks.
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