Phosphorus Incorporation During Silicon(001):phosphorus Gas-Source Molecular Beam Epitaxy: Effects on Film Growth Kinetics, Surface Morphology, and the Self-Organization of Germanium Quantum Dot Overlays

Cho, Benjamin

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Description

Title

Phosphorus Incorporation During Silicon(001):phosphorus Gas-Source Molecular Beam Epitaxy: Effects on Film Growth Kinetics, Surface Morphology, and the Self-Organization of Germanium Quantum Dot Overlays

Author(s)

Cho, Benjamin

Issue Date

2007

Doctoral Committee Chair(s)

Greene, Joseph E.

Department of Study

Materials Science and Engineering

Discipline

Materials Science and Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Materials Science

Language

eng

Abstract

I build upon these results to understand the effect of growth rate and P predeposition on Ge/Si(001) island geometry, density, and spatial distributions. Ge quantum dots are deposited on three types of starting surfaces: (1) Si(001) buffer layers which serve as a reference, (2) Si(001) layers with predeposited P coverages thetaP ranging from 0 to 1 ML, and (3) P-doped Si(001) with CP = 3.4x1018-8.3x10 18 cm-3, which corresponds to thetaP = 0.5-0.8 ML. Predeposited P passivates and roughens the Si(001) surface, which inhibits surface diffusion and causes an increase in Ge island density and pyramid-to-dome ratio, accompanied by enhanced island self-organization along directions.

Graduation Semester

2007

Type of Resource

text

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