Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2

Jung, Kyooho

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https://hdl.handle.net/2142/92891 Copy

Description

Title

Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2

Author(s)

Jung, Kyooho

Issue Date

2016-06-10

Director of Research (if dissertation) or Advisor (if thesis)

Li, Xiuling

Doctoral Committee Chair(s)

Li, Xiuling

Committee Member(s)

• Lyding, Joseph W.
• Zhu, Wenjuan
• Nam, SungWoo

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• nanowire
• Molybdenum disulfide (MoS2)
• array

Abstract

Nano materials such as nanowires and 2-dimensional (2-D) molybdenum disulfide (MoS2) have received tremendous attention over the past few decades. Numerous applications have been proposed such as nanowire MOSFETs, nanowire electrical generators, nanowire biosensors, nanowire single photon detectors, MoS2 transistors, and MoS2 photodetectors. Some of these devices outperform state-of-the-art commercial products, but none of these nano material based devices have been commercialized up to date. One of the biggest barriers for industries to use these nano materials is a lack of mass fabrications methods. For nanowires, obtaining a large area planar array of nanowires is extremely difficult and no known method can achieve a high-density large-area array of precisely positioned nanowires. Although there has been huge progress over the past few years, the yield and density of planar nanowire arrays from the reported literature are far from required values for industrial use. For MoS2, obtaining a single-crystal phase with a wafer-scale uniform monolayer is needed in order for the material to be mass fabricated. Although wafer scale monolayer MoS2 has successfully been grown, it contained a high density of grain boundaries which would cause non-uniform performance when mass produced into nano-scale devices. In this dissertation, general pathways for commercialization of nanowire and MoS2 based devices will be explained as well as the backgrounds on the nanowire/MoS2 field. Also, state-of the art methods for achieving planar nanowire arrays and growing monolayer MoS2 will be discussed. In a later section, a new method will be proposed that shows the highest yield and density of planar nanowires ever reported. A growth method for obtaining large-scale single-crystal monolayer MoS2 will be proposed as well.

Graduation Semester

2016-08

Type of Resource

text

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http://hdl.handle.net/2142/92891

Copyright and License Information

Copyright 2016 Kyooho Jung

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